Two dimensional electron gases (2DEGs) formed at the interfaces of oxideheterostructures draw considerable interest owing to their unique physics andpotential applications. Growing such heterostructures on conventionalsemiconductors has the potential to integrate their functionality withsemiconductor device technology. We demonstrate 2DEGs on a conventionalsemiconductor by growing $GdTiO_3-SrTiO_3$ on silicon. Structural analysisconfirms the epitaxial growth of heterostructures with abrupt interfaces and ahigh degree of crystallinity. Transport measurements show the conduction to bean interface effect, with $\sim 9\times 10^{13} \; cm^{-2}$ electrons perinterface. Good agreement is demonstrated between the electronic behavior ofstructures grown on Si and on an oxide substrate, validating the robustness ofthis approach to bridge between lab-scale samples to a scalable,technologically relevant materials system.
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